Abstract: With the increasing emphasis on energy conservation, emission reduction and environmental protection in the world, the application prospect of SiC power devices is becoming more and more broad. In the high frequency application of SiC MOSFET, with the increase of switching frequency, the change rate of voltage and current in the turn-on and turn-off process increases. Also, the phenomenon of current and voltage spike oscillation is gradually intensified due to the influence of circuit stray parameters.On the basis of the analysis of SiC MOSFET characteristics, the paper discusses the design requirements and design principles of SiC MOSFET drive circuit. Then, taking the SiC module C2M0080120D of Cree Company as an example, a driver circuit design is realized by means of the ACPL-355JC optocoupler driver module of Broadcom Company. The circuit not only has the characteristics of fast transmission delay and excellent performance, but also has the functions of overload and short circuit protection.The driving circuit is verified by LTspice simulation software, and the switching characteristics of SiC MOSFET under different working conditions are studied in depth. The experimental results show that the driving circuit can improve the switching time of SiC MOSFET and effectively solve the problem of current and voltage spike oscillation, which lays a foundation for the practical application of SiC MOSFET in the future.
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